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Same model may have multiple batches, images only for reference.
PHN210T,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHN210T,118

Part No PHN210T,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8SOIC
Datasheet
PHN210T,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 250pF @ 20V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1087821-PHN210T,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHN210T,118 CAD Model

Description

The Nexperia PHN210T,118 is a dual N-channel MOSFET that features a logic level gate.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 100 mOhm @ 2.2A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 6nC @ 10V
  • Package: 8-SO
  • Mounting: Surface mount
  • Applications: Power management, battery charging, and load switching

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3911 $50.8430
315+ $0.3210 $101.1150
485+ $0.3109 $150.7865
665+ $0.3009 $200.0985
860+ $0.2909 $250.1740
1,155+ $0.2608 $301.2240
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Availability: 137,500 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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