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Same model may have multiple batches, images only for reference.
PMPB33XP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMPB33XP,115

Part No PMPB33XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.5A 6DFN
Datasheet
PMPB33XP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 1575pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 5.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN2020MD (2x2)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1089737-PMPB33XP,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMPB33XP,115 CAD Model

Description

The PMPB33XP,115 is a P-channel MOSFET manufactured by Nexperia USA Inc.

  • Package: Reel-tray
  • Mounting: SMD (SMT)
  • Breakdown Voltage: 20V
  • Continuous Drain Current: 5.5A (Ta) @ 25°C
  • Maximum Rds On @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 23nC @ 4.5V
  • Suitable for: Discrete Semiconductor Products
  • Popularity Rating: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6733 $50.4975
185+ $0.5525 $102.2125
285+ $0.5352 $152.5320
390+ $0.5180 $202.0200
500+ $0.5007 $250.3500
670+ $0.4489 $300.7630
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Availability: 31,300 pieces
MOQ: 75 pcs
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