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Same model may have multiple batches, images only for reference.
PMV33UPE,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMV33UPE,215

Part No PMV33UPE,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.4A TO-236AB
Datasheet
PMV33UPE,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 22.1nC @ 4.5V
Max Input Capacitance 1820pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 490mW (Ta)
Maximum Rds On at Id,Vgs 36 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089790-PMV33UPE,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV33UPE,215 CAD Model

Description

The Nexperia USA Inc. PMV33UPE,215 MOSFET is a P-Channel device that is designed for use in a variety of electronic applications.

  • Maximum Power Dissipation: 490mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 36 mOhm @ 3A, 4.5V
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Component Status: active
  • Supply and Demand Status: sufficient
  • Popularity Rating: medium
  • Case/Package: TO-236AB (SOT23)
  • Maximum Gate-Source Voltage: ±8V

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2323 $51.1060
460+ $0.2176 $100.0960
715+ $0.2103 $150.3645
1,025+ $0.1956 $200.4900
1,330+ $0.1882 $250.3060
1,660+ $0.1809 $300.2940
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Availability: 28,690 pieces
MOQ: 220 pcs
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