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Same model may have multiple batches, images only for reference.
SSM6N42FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N42FE(TE85L,F)

Part No SSM6N42FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.8A ES6
Datasheet
SSM6N42FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA
Maximum Rds On at Id,Vgs 240 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2nC @ 4.5V
Max Input Capacitance 90pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 107446-SSM6N42FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6N42FE(TE85L,F) CAD Model

Description

This electronic component is an obsolete (EOL) product manufactured by Toshiba Semiconductor and Storage.

  • FET Type: Dual N-Channel
  • Gate Type: Logic level gate
  • Popularity: Medium
  • Fake Product Risk: 53% chance of encountering fake products in the open market
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Operating Temperature Range: Up to 150°C
  • Maximum Rds On @ 500mA, 4.5V: 240 mOhm
  • Case/Package: ES6 (1.6x1.6)

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