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Same model may have multiple batches, images only for reference.
PMXB120EPEZ Real Image
Same model may have multiple batches, images only for reference.

PMXB120EPEZ

Part No PMXB120EPEZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.4A DFN1010D-3
Datasheet
PMXB120EPEZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 309pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta), 8.3W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1010D-3
Dimension 3-XDFN Exposed Pad
Win Source Part Number 1089809-PMXB120EPEZ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMXB120EPEZ CAD Model

Description

The Nexperia USA Inc. PMXB120EPEZ is a MOSFET electronic component that is designed to provide reliable and efficient performance in various electronic applications.

  • Polarity: P-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.4A (Ta) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
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Availability: 54,400 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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