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Same model may have multiple batches, images only for reference.
PMXB40UNE Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMXB40UNE

Part No PMXB40UNE
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 3.2A 3DFN
Datasheet
PMXB40UNE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 11.6nC @ 4.5V
Max Input Capacitance 556pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 3.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1010D-3
Dimension 3-XDFN Exposed Pad
Win Source Part Number 1089810-PMXB40UNE
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMXB40UNE CAD Model

Description

The PMXB40UNE is a high-performance N-channel MOSFET transistor manufactured by Nexperia USA Inc.

  • On-Resistance: 0.045Ω
  • Maximum Drain Current: 3.2A
  • Maximum Gate-Source Voltage: ±8V
  • Package: DFN1010D-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4090 $51.1250
300+ $0.3356 $100.6800
465+ $0.3252 $151.2180
640+ $0.3147 $201.4080
825+ $0.3042 $250.9650
1,105+ $0.2727 $301.3335
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Availability: 11,927 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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