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Same model may have multiple batches, images only for reference.
PMZ1200UPEYL Real Image
Same model may have multiple batches, images only for reference.

PMZ1200UPEYL

Part No PMZ1200UPEYL
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 410MA DFN1006-3  /  P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount SOT-883
Datasheet
PMZ1200UPEYL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43.2 pF @ 15 V
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-883
Package / Case SC-101, SOT-883
Base Product Number PMZ1200
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1727-2315-2,568-12601-2,568-12601-1,934069329315,1727-2315-1,1727-2315-6,568-12601-1-ND,568-12601-2-ND,568-12601-6,568-12601-6-ND
Standard Package 10,000
Win Source Part Number 1085730-PMZ1200UPEYL
Ultra Librarian 3D Model Ultra Librarian PMZ1200UPEYL CAD Model

Description

The PMZ1200UPEYL is a P-Channel MOSFET transistor from Nexperia USA Inc.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 410mA (Ta) @ 25°C
  • On-Resistance (Rds On): 1.4Ohm @ 410mA and 4.5V
  • Gate-Source Threshold Voltage (Vgs(th)): 950mV @ 250μA
  • Power Dissipation: 310mW (Ta) and 1.67W (Tc)
  • Package: SC-101, SOT-883
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate Charge (Qg): 1.2 nC @ 4.5Vgs
  • Input Capacitance (Ciss): 43.2 pF @ 15Vds
  • Gate-Source Voltage (Vgs): ±8V

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