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Same model may have multiple batches, images only for reference.
PSMN012-60YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN012-60YS,115

Part No PSMN012-60YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 59A LFPAK / Trans MOSFET N-CH 60V 59A 5-Pin(4+Tab) LFPAK T/R
Datasheet
PSMN012-60YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 28.4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1685pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 89W (Tc)
Rds On (Maximum) @ Id, Vgs 11.1 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package LFPAK56, Power-SO8
Package SC-100, SOT-669
Win Source Part Number 792612-PSMN012-60YS,115
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN012-60YS
Introduction Date January 05, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PSMN012-60YS,115 CAD Model

Description

The Nexperia USA Inc. PSMN012-60YS,115 is a MOSFET that has a current - continuous drain (Id) @ 25°C of 59A (Tc). Nexperia USA Inc..

  • Gate Charge (Qg) (maximum) @ Vgs: 28.4nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1685pF @ 30V
  • Power Dissipation (maximum): 89W (Tc)
  • Estimated EOL Date: 2027
  • Supply and Demand Status: Limited

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