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Same model may have multiple batches, images only for reference.
PSMN035-150B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN035-150B,118

Part No PSMN035-150B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 50A D2PAK
Datasheet
PSMN035-150B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 4720pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090350-PSMN035-150B,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN035-150B,118 CAD Model

Description

The Nexperia USA Inc. PSMN035-150B,118 is an N-channel MOSFET with a drain-source breakdown voltage of 150V and continuous drain current of 50A at 25°C.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 4720pF @ 25V
  • Maximum Gate Charge: 79nC @ 10V
  • Power Dissipation: 250W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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