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Same model may have multiple batches, images only for reference.
PSMN038-100YLX Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN038-100YLX

Part No PSMN038-100YLX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 30A LFPAK
Datasheet
PSMN038-100YLX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 39.2nC @ 10V
Max Input Capacitance 1905pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94.9W (Tc)
Maximum Rds On at Id,Vgs 37.5 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090352-PSMN038-100YLX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN038-100YLX CAD Model

Description

The Nexperia USA Inc. PSMN038-100YLX is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 94.9W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Maximum Rds On @ Id,Vgs: 37.5 mOhm @ 5A, 10V
  • Package: LFPAK56, Power-SO8
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5000 $50.0000
215+ $0.4678 $100.5770
335+ $0.4517 $151.3195
480+ $0.4194 $201.3120
620+ $0.4033 $250.0460
775+ $0.3871 $300.0025
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