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Same model may have multiple batches, images only for reference.
PSMN1R3-30YL,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN1R3-30YL,115

Part No PSMN1R3-30YL,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
PSMN1R3-30YL,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6227pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 121W (Tc)
Maximum Rds On at Id,Vgs 1.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SOT-1023, 4-LFPAK
Win Source Part Number 1090370-PSMN1R3-30YL,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN1R3-30YL,115 CAD Model

Description

The PSMN1R3-30YL,115 is an N-channel MOSFET manufactured by Nexperia USA Inc. with a popularity level of medium in the market and sufficient supply and demand status.

  • Power Dissipation: 121W (Tc)
  • Package: LFPAK56, Power-SO8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage @ 1mA: 2.15V
  • Maximum Gate-Source Voltage: ±20V

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Quantity Unit Price Ext. Price
35+ $1.5163 $53.0705
85+ $1.2442 $105.7570
125+ $1.2053 $150.6625
175+ $1.1664 $204.1200
225+ $1.1276 $253.7100
300+ $1.0109 $303.2700
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