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Same model may have multiple batches, images only for reference.
GAN041-650WSBQ Real Image
Same model may have multiple batches, images only for reference.

GAN041-650WSBQ

Part No GAN041-650WSBQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description GAN041-650WSB/SOT429/TO-247 / N-Channel 650 V 47.2A 187W Through Hole TO-247-3
Datasheet
GAN041-650WSBQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Package Tube
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
Power Dissipation (Max) 187W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349696-GAN041-650WSBQ
Ultra Librarian 3D Model Ultra Librarian GAN041-650WSBQ CAD Model

Description

The GAN041-650WSBQ is a through-hole N-channel GaNFET transistor that is ideal for use in discrete semiconductor products.

  • Manufacturer: Nexperia USA Inc.
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 47.2A
  • Maximum Rds On: 41mOhm @ 32A and 10V
  • Gate Threshold Voltage: 4.5V @ 1mA
  • Maximum Power Dissipation: 187W
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 175°C

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