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TJ60S06M3L,LXHQ

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Part No	TJ60S06M3L,LXHQ
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 60V 60A DPAK
Datasheet	TJ60S06M3L,LXHQ Datasheet
Sample
Rohs State
ECAD Module
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Description

AEC-Q101 qualified
Low drain-source on-resistance: RDS(ON) = 8.6 m Ω (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, I D = -1 mA)

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TJ60S06M3L,LXHQ

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