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RN4989(T5L,F,T)

Part No RN4989(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092531-RN4989(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4989(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN4989(T5L,F,T) is a pre-biased (dual) NPN and PNP transistor pair.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Frequency Transition: 250MHz and 200MHz
  • Typical Gain (hFE): 70 @ 10mA and 5V
  • Package: US6
  • Mounting Method: SMD (SMT)
  • Collector Cut-Off Current (max): 100μA (ICBO)
  • Maximum Power Dissipation: 200mW
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8143 $61.0725
175+ $0.6687 $117.0225
270+ $0.6480 $174.9600
370+ $0.6272 $232.0640
480+ $0.6064 $291.0720
640+ $0.5429 $347.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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