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Same model may have multiple batches, images only for reference.
PSMN3R3-80BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN3R3-80BS,118

Part No PSMN3R3-80BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A D2PAK
Datasheet
PSMN3R3-80BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 111nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8161pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 306W (Tc)
Rds On (Maximum) @ Id, Vgs 3.5 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 792625-PSMN3R3-80BS,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN3R3-80BS,118 CAD Model

Description

The Nexperia USA Inc. PSMN3R3-80BS is a MOSFET with a drain source voltage of 80V.

  • Continuous Drain Current @ 25°C: 120A
  • Maximum Rds On: 3.5 mOhm @ 25A, 10V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Operating Temperature Range: -55°C to 175°C
  • Category: Discrete Semiconductor Products
  • Gate Voltage for Maximum Rds On and Minimum Rds On: 10V
  • Estimated EOL Date: 2029
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • ECCN Compliant: Yes
  • Country of Origin: Unknown

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