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Same model may have multiple batches, images only for reference.
PSMN7R8-120ESQ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN7R8-120ESQ

Part No PSMN7R8-120ESQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 70A I2PAK / Trans MOSFET N-CH 120V 70A 3-Pin(3+Tab) I2PAK Rail
Datasheet
PSMN7R8-120ESQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 120V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 167nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9473pF @ 60V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 349W (Tc)
Rds On (Maximum) @ Id, Vgs 7.9 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 792637-PSMN7R8-120ESQ
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN7R8-120ES
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN7R8-120ESQ CAD Model

Description

The Nexperia PSMN7R8-120ESQ is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Continuous Drain Current @ 25°C: 70A
  • Maximum Drain-Source Voltage: 120V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 349W @ Tc
  • Maximum Rds On: 7.9 mOhm @ 25A, 10V
  • Supply and Demand Status: Limited
  • Alternative Parts: PSMN7R8-120ES
  • Status: Obsolete (EOL)

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