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Same model may have multiple batches, images only for reference.
PSMN8R5-100ESQ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN8R5-100ESQ

Part No PSMN8R5-100ESQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A I2PAK / Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) I2PAK Rail
Datasheet
PSMN8R5-100ESQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 111nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5512pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 263W (Tc)
Rds On (Maximum) @ Id, Vgs 8.5 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 792638-PSMN8R5-100ESQ
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN8R5-100ES
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN8R5-100ESQ CAD Model

Description

The Nexperia USA Inc. electronic component with the Win Source Part Number 792638-PSMN8R5-100ESQ is a MOSFET that comes in a TO-262-3 Long Leads, I2Pak, TO-262AA package.

  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Maximum Power Dissipation: 263W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 111nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5512pF @ 50V
  • Rds On (Maximum) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
  • Alternative Part: PSMN8R5-100ES
  • Supply and Demand Status: Limited

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