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Same model may have multiple batches, images only for reference.
PUMB10,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMB10,115

Part No PUMB10,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W 6TSSOP
Datasheet
PUMB10,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA
Frequency - Transition 180MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090698-PUMB10,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUMB10,115 CAD Model

Description

The Nexperia USA Inc. PUMB10,115 is a Dual PNP Pre-Biased Transistor designed for use in Discrete Semiconductor Products.

  • Frequency Transition: 180MHz
  • Maximum Collector Current: 100mA
  • Transistor Polarity: 2 PNP
  • Typical Gain (hFE): 100 @ 10mA, 5V
  • Mounting: SMD (SMT) technology on a 6-TSSOP package
  • Supply: sufficiently supplied in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1147 $50.4680
1,065+ $0.0942 $100.3230
1,645+ $0.0912 $150.0240
2,270+ $0.0883 $200.4410
2,935+ $0.0853 $250.3555
3,925+ $0.0765 $300.2625
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