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Same model may have multiple batches, images only for reference.
PUMD15,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMD15,115

Part No PUMD15,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP 6TSSOP
Datasheet
PUMD15,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090707-PUMD15,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PUMD15,115 CAD Model

Description

Nexperia USA Inc. presents a dual pre-biased NPN and PNP transistor set in a 6-TSSOP package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Collector Cut-off Current: 1μA
  • Typical Gain (hFE): 30 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Maximum Vce (sat): 150mV @ 500μA and 10mA
  • Base Resistor (R1): 4.7k ohms
  • Emitter-Base Resistor (R2): 4.7k ohms
  • Applications: various applications in the industrial and power management sectors

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