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PZTA92,115

Part No PZTA92,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PNP 300V 0.1A SOT223  /  Bipolar (BJT) Transistor PNP 300 V 100 mA 50MHz 1.2 W Surface Mount SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V
Power - Max 1.2 W
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
Base Product Number PZTA92
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names PZTA92,115-ND,PZTA92 T/R,933982080115,1727-1747-1,1727-1747-2,568-11290-1-ND,568-11290-6,PZTA92 T/R-ND,1727-1747-6,568-11290-2,568-11290-2-ND,568-11290-6-ND,568-11290-1
Standard Package 1,000
Win Source Part Number 1086518-PZTA92,115
Ultra Librarian 3D Model Ultra Librarian PZTA92,115 CAD Model

Description

The PZTA92,115 is a PNP transistor from Nexperia USA Inc. with a collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA manufactured by Nexperia USA Inc..

  • Collector-Emitter Breakdown Voltage: 300V
  • Maximum Collector Current: 100mA
  • Power Dissipation: 1.2W
  • DC Current Gain: 25 @ 30mA and 10V
  • Vce Saturation: 500mV @ 2mA and 20mA
  • Collector Cutoff Current: 20nA
  • Frequency Transition: 50MHz
  • Package: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
  • Applications: Automotive, AEC-Q101, discrete semiconductor products
  • Packaging: Tape and reel
  • Standard Package: 1,000

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