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Same model may have multiple batches, images only for reference.
MJ10007 Mospec
Same model may have multiple batches, images only for reference.

MJ10007

Part No MJ10007
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 400V 10A TO3
Datasheet
MJ10007 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2.9V @ 1A, 10A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2.5A, 5V
Power - Max 150 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 640849-MJ10007
Ultra Librarian 3D Model Ultra Librarian MJ10007 CAD Model

Description

The MJ10007 is a NPN Darlington Bipolar Transistor suitable for high power audio, switching, and linear applications.

  • Collector-emitter breakdown voltage: 400V
  • Maximum power dissipation: 150W
  • Maximum collector current: 10A
  • DC current gain: 40 @ 2.5A and 5V
  • Vce saturation: 2.9V @ 1A and 10A
  • Package: TO-3
  • Operating temperature range: -65°C to 200°C
  • Package type: Bag
  • Common applications: Power amplifiers, motor control circuits, and high voltage switching applications

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