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Same model may have multiple batches, images only for reference.
NTE102 Real Image
Same model may have multiple batches, images only for reference.

NTE102

Part No NTE102
Manufacturer NTE
Catalog RF Transistors (BJT)
Description TRANS PNP 24V 0.15A TO5 / Bipolar (BJT) Transistor PNP 24 V 150 mA 150 mW Through Hole TO-5
Datasheet
NTE102 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NTE Electronics, Inc
Package Bag
Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 24 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 12mA, 150mV
Power - Max 150 mW
Temperature Range - Operating -65°C ~ 100°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2368-NTE102
Standard Package 1
Win Source Part Number 1082911-NTE102
Ultra Librarian 3D Model Ultra Librarian NTE102 CAD Model

Description

The NTE102 is a PNP bipolar transistor that is designed for use in discrete semiconductor products.

  • Power-Max: 150mW
  • Voltage-Collector Emitter Breakdown (Max): 24V
  • Current-Collector (Max): 150mA
  • Vce Saturation (Max): 200mV
  • Mounting Type: Through hole
  • Package: TO-205AA, TO-5-3 Metal Can

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Quantity Unit Price Ext. Price
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19+ $6.3108 $119.9052
29+ $6.1136 $177.2944
40+ $5.9164 $236.6560
51+ $5.7193 $291.6843
68+ $5.1275 $348.6700
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Availability: 7,100 pieces
MOQ: 8 pcs
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