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2N7002BKV,115

Part No 2N7002BKV,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.34A SOT666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 340mA
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 350mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 104519-2N7002BKV,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N7002BKV,115 CAD Model

Description

Introducing the 2N7002BKV,115 MOSFET by NXP Semiconductors

The 2N7002BKV,115 is a compact, high-performance Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by NXP Semiconductors. This efficient and reliable component is an ideal choice for a wide range of applications requiring low power consumption and high switching speeds.

Key Features

  • Device Type: N-channel MOSFET
  • Package: SOT-666, a small and surface-mountable form factor that is well-suited for compact PCB layouts.
  • Drain-Source Voltage (V<sub>DS): 60V, providing a good balance between performance and robustness for various circuit designs.
  • Continuous Drain Current (I<sub>D): 300 mA, allowing for efficient current handling in a small package.
  • On-Resistance (R<sub>DS(on)): 1.6 ohms at V<sub>GS = 10 V, which ensures low power loss and heat dissipation during operation.
  • Gate-Source Voltage (V<sub>GS): ±20 V, providing a wide range of control voltages for the gate drive.
  • Fast Switching Speed: The device is optimized for high-speed switching applications, enabling efficient operation in circuits that require rapid on-off states.
  • Low Threshold Voltage: The low gate threshold voltage allows for operation at lower voltages, making it suitable for low-voltage applications.

Applications

The 2N7002BKV,115 MOSFET is versatile and can be used in various electronic circuits and systems including:

  • Power management circuits
  • Load/switch drivers
  • Motor control circuits
  • DC-DC converters
  • Battery management systems
  • LED lighting solutions

Quality and Reliability

NXP Semiconductors is committed to providing high-quality products. The 2N7002BKV,115 MOSFET is no exception and is designed to meet stringent industry standards for performance and reliability. It offers a robust solution for designers looking to optimize their systems for efficiency and longevity.

Whether you're developing power supplies, designing intelligent motor controls, or working on portable electronics, the 2N7002BKV,115 from NXP is a solid choice that combines performance with a small footprint, making it a valuable component in any electronic designer's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2329 $50.0735
525+ $0.1911 $100.3275
815+ $0.1851 $150.8565
1,120+ $0.1792 $200.7040
1,445+ $0.1732 $250.2740
1,935+ $0.1553 $300.5055
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 159,090 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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