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Same model may have multiple batches, images only for reference.
MS2201
Same model may have multiple batches, images only for reference.

MS2201

Part No MS2201
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF MICROWAVE TRANSISTORS / TRANS RF BIPO 10W 250MA M220
Datasheet
MS2201 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Frequency - Transition 1.025GHz to 1.15GHz
Gain 9dB
Maximum Power Dissipation 10W
Typical Gain (hFE) (Min) 0.95 @ 10mA, 5V
Maximum Current Collector 250mA
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package M220
Win Source Part Number 1079827-MS2201
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MS2201
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MS2201 CAD Model

Description

This electronic component is an active product manufactured by Microsemi Corporation.

  • Win Source Part Number: 1079827-MS2201
  • Category: discrete semiconductor product
  • Mounting Type: chassis mounted
  • Gain: 9dB
  • Frequency Transition Range: 1.025GHz to 1.15GHz
  • Transistor Polarity: NPN
  • Family Name: MS2201
  • Maximum Current Collector: 250mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
  • Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V
  • Maximum Power Dissipation: 10W
  • Estimated EOL Date: obsolete/end of life
  • Usage: Commonly-used part
  • Supply and Demand Status: sufficient

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140+ $1.2432 $174.0480
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335+ $1.0427 $349.3045
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