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BUK7E4R6-60E

Part No BUK7E4R6-60E
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 6230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 234W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 039732-BUK7E4R6-60E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK7E4R6-60E CAD Model

Description

Introducing the BUK7E4R6-60E Power MOSFET by NXP

The BUK7E4R6-60E is a cutting-edge power MOSFET brought to you by NXP Semiconductors, designed to meet the demanding requirements of modern electronic applications. This high-performance product is part of NXP's extensive portfolio of energy-efficient power management solutions, and it offers a perfect blend of low on-state resistance, high switching speed, and robust thermal performance.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The BUK7E4R6-60E boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in your applications.
  • High-Speed Switching: With its ability to switch at high frequencies, this power MOSFET enables faster operation and is ideal for high-efficiency power supplies and converters.
  • 60V Drain-Source Voltage (V<sub>DS): The device is designed to handle a maximum drain-source voltage of 60 volts, making it suitable for a wide range of applications.
  • Enhanced Thermal Performance: The BUK7E4R6-60E is encapsulated in a robust package that ensures superior thermal management, thus enhancing its reliability and longevity even under high-temperature operating conditions.

Applications

The versatility of the BUK7E4R6-60E makes it an ideal choice for various applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switch-mode power supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality and reliability, and the BUK7E4R6-60E is no exception. Manufactured with state-of-the-art technology and subjected to rigorous testing, this power MOSFET is designed to perform consistently over a wide range of environmental conditions.

Environmental Compliance

Aligned with NXP's dedication to environmental stewardship, the BUK7E4R6-60E is compliant with RoHS regulations, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

In summary, the BUK7E4R6-60E from NXP is a powerful, efficient, and reliable component that can significantly enhance the performance and efficiency of your electronic designs. Its robust package, low on-state resistance, and high-speed switching capabilities make it a top choice for engineers and designers looking to push the boundaries of power management technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.0677 $65.3385
11+ $10.7230 $117.9530
17+ $10.3881 $176.5977
23+ $10.0520 $231.1960
30+ $9.7170 $291.5100
40+ $8.7122 $348.4880
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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