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Same model may have multiple batches, images only for reference.
SIDC16D60SIC3
Same model may have multiple batches, images only for reference.

SIDC16D60SIC3

Part No SIDC16D60SIC3
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Datasheet
SIDC16D60SIC3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Package Bulk
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V
Capacitance @ Vr, F 170pF @ 1V, 1MHz
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Sawn on foil
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number SIDC16
Other Names SP000014898
Standard Package 1
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282556-SIDC16D60SIC3
Ultra Librarian 3D Model Ultra Librarian SIDC16D60SIC3 CAD Model

Description

The 1282556-SIDC16D60SIC3 is a Silicon Carbide Schottky diode used in discrete semiconductor products.

  • Maximum DC reverse voltage: 600V
  • Average rectified current: 5A
  • Forward voltage: 1.7V @ 5A
  • Reverse recovery time: 0ns
  • Reverse leakage current: 200 µA @ 600V
  • Capacitance: 170pF @ 1V and 1MHz
  • Operating temperature range: -55°C to 175°C
  • Package: die with a sawn on foil supplier device package
  • RoHS: non-compliant

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