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2PA1015GR,126

Part No 2PA1015GR,126
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.15A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 500mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 1004079-2PA1015GR,126
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2PA1015GR,126 CAD Model

Description

Product Overview: 2PA1015GR,126 - NXP

The 2PA1015GR,126 is a high-performance, small-signal PNP bipolar junction transistor (BJT) designed and manufactured by NXP Semiconductors. This device is part of NXP's range of low-voltage transistors, which are widely recognized for their reliability and efficiency. The 2PA1015GR,126 is ideal for a variety of applications, including switching and amplification in consumer electronics, automotive, and industrial systems.

Key Features

  • Transistor Polarity: PNP - This transistor type is optimized for the flow of holes as the majority charge carriers, making it suitable for use in positive-ground circuits.
  • Collector-Emitter Voltage (Vceo): This transistor can withstand voltages up to 50V between the collector and emitter when the base is open, ensuring stable operation in a range of electronic circuits.
  • Collector Current (Ic): The 2PA1015GR,126 can handle continuous collector currents up to 150 mA, making it capable of driving moderate loads.
  • Power Dissipation (Pd): With a power dissipation of 250 mW, this transistor can manage a fair amount of power, enabling it to be used in power-sensitive designs.
  • DC Current Gain (hFE): It features a high DC current gain, typically in the range of 70 to 560, which allows for effective current amplification in various signal processing applications.
  • Package / Case: The device comes in a TO-92 package, which is a widely used through-hole mounting package that is easy to handle and solder, even for hobbyists or in educational environments.

Applications

The versatility of the 2PA1015GR,126 makes it suitable for a wide array of applications including:

  • Audio amplifiers and preamplifiers
  • Signal processing
  • Low-power switching applications
  • Driver stages in hi-fi amplifiers and television circuits
  • Various consumer electronic devices

Conclusion

The NXP 2PA1015GR,126 is a robust and reliable semiconductor device that offers a combination of high performance and low power consumption. Its PNP polarity, high voltage and current handling capabilities, along with its high current gain, make it an excellent choice for designers looking to create compact, efficient, and reliable electronic products. Whether for professional-grade applications or educational purposes, the 2PA1015GR,126 is a component that adds value to any electronic project.

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