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A2T07H310-24SR6

Part No A2T07H310-24SR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 70V 880MHZ
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 880MHz
Gain 18.6dB
Voltage - Test 28 V
Current - Test 700 mA
Power - Output 47W
Voltage - Rated 70 V
Mounting Type Chassis Mount
Package / Case NI-1230-4LS2L
Supplier Device Package NI-1230-4LS2L
Base Product Number A2T07
Standard Package 150 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 858887-A2T07H310-24SR6
Ultra Librarian 3D Model Ultra Librarian A2T07H310-24SR6 CAD Model

Description

The A2T07H310-24SR6 is a state-of-the-art RF power transistor from the renowned semiconductor manufacturer NXP Semiconductors. Designed to deliver exceptional performance and reliability, this product stands out in the field of high-frequency power amplification. NXP's dedication to innovation is evident in the advanced features and specifications that this transistor offers.

Key Features

  • Frequency Range: The A2T07H310-24SR6 operates at a frequency range that is ideal for a variety of RF applications, making it a versatile choice for designers.
  • High Power Output: With its ability to handle high power levels, this transistor is perfect for applications requiring a robust output without compromising on signal integrity.
  • Efficiency: The device is engineered to provide high efficiency, which is crucial for minimizing heat dissipation and maximizing performance in demanding environments.
  • Durability: Constructed with NXP's cutting-edge materials and manufacturing processes, the A2T07H310-24SR6 is built to withstand the rigors of continuous operation in commercial and industrial settings.
  • Thermal Management: This product features an advanced thermal management system that ensures stable operation even under high-temperature conditions.

Applications

The A2T07H310-24SR6 is suitable for a wide array of applications, including but not limited to:

  • Broadcast transmitters
  • Industrial heating and drying systems
  • RF energy applications
  • Medical applications such as MRI and RF ablation
  • Communications infrastructure

Technical Specifications

Parameter Value
Product Category RF Transistors
Brand NXP Semiconductors
Mounting Style SMD/SMT
Package / Case Ceramic
Minimum Frequency 700 MHz
Maximum Frequency 3.1 GHz
Output Power 24 W
Gain 17 dB
Efficiency Up to 70%

Conclusion

In summary, the A2T07H310-24SR6 from NXP Semiconductors is a high-performance RF power transistor that offers an optimal blend of power, efficiency, and reliability. Its robust design and advanced features make it an ideal choice for engineers looking to push the boundaries of RF power amplification in a variety of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $488.7219 $488.7219
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Availability: 410 pieces
Order Increment : 1 pcs
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