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AFT18S230-12NR3

Part No AFT18S230-12NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity LDMOS
Frequency 1.88GHz
Gain 17.6dB
Voltage - Test 28V
Current - Test 1.4A
Power - Output 50W
Voltage Rating 65V
Case / Package OM-780-2L2L
Win Source Part Number 1016268-AFT18S230-12NR3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AFT18S230-12NR3 CAD Model

Description

The AFT18S230-12NR3 is a cutting-edge RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the industry. This high-performance transistor is specifically engineered to deliver outstanding output power, efficiency, and gain in high-frequency applications. It is an ideal component for use in a wide range of RF energy applications, including but not limited to industrial, scientific, medical (ISM) applications, broadcast transmitters, and RF plasma lighting.

With an operating frequency range of 1800-2200 MHz, the AFT18S230-12NR3 provides a flexible solution for designers working on systems within the L-band spectrum. The device boasts a robust output power of 230 W CW, ensuring that it can handle demanding continuous wave applications with ease. Moreover, it has been optimized for 12 V operation, making it compatible with a variety of power supply configurations and simplifying system design.

The AFT18S230-12NR3 features NXP's advanced LDMOS technology, which is renowned for its high efficiency and thermal stability. This technology allows the transistor to operate with high linearity, making it an exceptional choice for applications that require precise signal amplification. Additionally, the device's high gain of 17.7 dB ensures that the signal is amplified significantly without the need for additional stages, reducing overall component count and system complexity.

The transistor comes packaged in a robust over-molded plastic package, which provides excellent environmental protection and ensures reliable operation under various conditions. Moreover, the AFT18S230-12NR3 is characterized by its ruggedness, capable of withstanding a high voltage standing wave ratio (VSWR), which is critical for ensuring longevity and durability in the field.

In summary, the AFT18S230-12NR3 by NXP Semiconductors is a high-performance, efficient, and reliable RF power LDMOS transistor that offers an optimal solution for designers seeking to enhance their RF power applications. Its combination of power, efficiency, and ruggedness makes it a top choice for professionals in the industry.

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