NXP BAS70L Schottky Barrier Diodes
The NXP BAS70L series encompasses high-performance Schottky barrier diodes designed for applications requiring fast switching and low forward voltage drop. These diodes are particularly well-suited for high-frequency rectification in switch-mode power supplies, as well as for use in blocking, clamping, and protection circuits in a variety of electronic devices.
Key Features
- Low forward voltage drop (VF) which enhances energy efficiency by reducing power loss in conductive states.
- Fast switching capability, making them ideal for high-frequency applications.
- Low leakage current that ensures minimal power loss when the diode is in the off-state.
- High surge current capability, providing robust performance during transient conditions.
- Surface-mounted package allows for efficient assembly and space-saving design.
Applications
The BAS70L series is versatile and can be used in a wide range of applications, including:
- High-frequency rectification in power supplies.
- Protection circuits in consumer and industrial electronics.
- Clamping and voltage regulation in RF applications.
- Switching operations in portable devices.
Product Specifications
| Parameter |
Value |
| Package |
SOD-882L |
| Configuration |
Single |
| Maximum Repetitive Reverse Voltage (VRRM) |
70 V |
| Forward Continuous Current (IF) |
70 mA |
| Forward Voltage Drop (VF) @ IF |
1 V @ 15 mA |
| Reverse Leakage Current (IR) @ VR |
2 µA @ 70 V |
| Operating Temperature Range |
-55°C to +150°C |
With its low-profile and small footprint, the NXP BAS70L Schottky barrier diode is a perfect choice for designers looking to optimize their circuit designs for both performance and space. Whether for commercial or industrial applications, the BAS70L series delivers reliability and efficiency, making it a go-to component for modern electronic systems.