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BAW101S,115

Part No BAW101S,115
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 300V 250MA 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Configuration 2 Independent
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 300V
Current - Average Rectified (Io) (per Diode) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.1V @ 100mA
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 150nA @ 250V
Operating Temperature - Junction 150°C (Max)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 200353-BAW101S,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BAW101S,115 CAD Model

Description

Product Overview: BAW101S,115 by NXP Semiconductors

The BAW101S,115 is a high-performance, dual series switching diode designed and manufactured by NXP Semiconductors, a global leader in the semiconductor industry. This product is engineered to meet the rigorous demands of high-speed switching applications and is housed in a compact SOT-23 package, making it suitable for use in space-constrained environments.

Key Features

      
  • High-Speed Switching: The BAW101S,115 is optimized for high-speed switching, offering a fast reverse recovery time that is essential for high-frequency applications.
  •   
  • Dual Series Configuration: With two diodes connected in series, this configuration provides enhanced performance characteristics suitable for a variety of switching circuits.
  •   
  • Low Leakage Current: The device exhibits a low leakage current, which improves its efficiency and reliability, making it an ideal choice for precision applications.
  •   
  • Compact SOT-23 Package: The small footprint of the SOT-23 package allows for high-density mounting, which is beneficial in applications where board space is at a premium.
  •   
  • High Breakdown Voltage: The BAW101S,115 boasts a high breakdown voltage, providing a robust solution for circuits that experience high voltage transients.

Applications

The BAW101S,115 is versatile and can be used in a wide range of applications, including:

      
  • High-speed logic switching circuits
  •   
  • Voltage clamping applications
  •   
  • Protection circuits
  •   
  • High-frequency inverters
  •   
  • Signal demultiplexing

Product Specifications

The BAW101S,115 has the following specifications:

      
  • Package: SOT-23
  •   
  • Configuration: Dual series
  •   
  • Reverse Recovery Time: Fast
  •   
  • Leakage Current: Low
  •   
  • Breakdown Voltage: High

With its high-speed switching capabilities, low leakage current, and compact package, the BAW101S,115 from NXP Semiconductors is an excellent choice for designers and engineers looking to enhance the performance and efficiency of their electronic circuits. Whether for industrial, commercial, or consumer applications, this dual series switching diode is engineered to deliver reliability and precision.

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Pricing & Ordering

Quantity Unit Price Ext. Price
760+ $0.0658 $50.0080
1,855+ $0.0540 $100.1700
2,870+ $0.0523 $150.1010
3,955+ $0.0506 $200.1230
5,115+ $0.0489 $250.1235
6,835+ $0.0439 $300.0565
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,530 pieces
MOQ: 760 pcs
Order Increment : 1 pcs
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