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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer NXP
Win Source Part Number 232206-BC847B
Family Name BC847B
Introduction Date September 01, 1994
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Grade -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Ultra Librarian 3D Model Ultra Librarian BC847B CAD Model

Description

Product Overview: NXP BC847B NPN Bipolar Transistor

The NXP BC847B represents a high-quality NPN bipolar (BJT) transistor that is a fundamental component for a wide range of electronic applications. This small-signal transistor is designed for general-purpose switching and amplification tasks, offering reliable performance in a compact SOT-23 package. The BC847B is a versatile choice for designers due to its low current and low voltage capabilities, which make it suitable for use in low-power circuits.

Key Features

  • Transistor Type: NPN - The BC847B is an NPN transistor, which means it is optimized for fast turn-on and turn-off times when a positive current is applied to the base.
  • Package: SOT-23 - This small surface-mount package allows for efficient use of PCB real estate, making it ideal for densely packed electronic assemblies.
  • Collector-Emitter Voltage (Vceo): 45V - The maximum voltage that can be applied from collector to emitter while the base is open-circuit.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • DC Current Gain (hFE): 200-450 at 2mA - This range of current gain ensures that a small base current can control a larger collector current efficiently.
  • Power Dissipation (Pd): 250mW - The maximum power the transistor can dissipate without exceeding the maximum junction temperature.
  • Operating Temperature Range: -65°C to +150°C - The BC847B can operate effectively over a wide temperature range, making it suitable for various environmental conditions.

Applications

The NXP BC847B is designed for use in driver stages of audio amplifiers, signal processing, and switching applications. Its low noise and high gain make it an excellent choice for pre-amplification of small signals. Additionally, it can be used in various digital and analog circuits where a general-purpose NPN transistor is required.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BC847B is no exception. It is manufactured to the highest standards, ensuring consistent performance and reliability for your electronic projects. Whether you are designing consumer electronics, industrial control systems, or experimenting with hobbyist projects, the BC847B from NXP provides the performance you can trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4,170+ $0.0120 $50.0400
8,850+ $0.0113 $100.0050
13,765+ $0.0109 $150.0385
19,805+ $0.0101 $200.0305
25,775+ $0.0097 $250.0175
31,915+ $0.0094 $300.0010
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 990,000 pieces
MOQ: 4170 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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