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BFG540W/X,115

Part No BFG540W/X,115
Manufacturer NXP
Catalog RF Transistors (BJT)
Description TRANS WIDEBAND 9GHZ SOT-343 15V
Datasheet
Sample
ECAD Module ECAD
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Pricing & Ordering $0.9966 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
40+
$1.4130
$56.520
90+
$1.1600
$104.400
135+
$1.1240
$151.740
185+
$1.0870
$201.095
240+
$1.0510
$252.240
320+
$0.9420
$301.440
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 18,200 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Products specifications

Application Field Used in Portable Devices, Consumer Electronics
Supply and Demand Status Sufficient
Fake Threat In the Open Market 40 pct.
Popularity Medium
Win Source Part Number 1023226-BFG540W/X,115
Case / Package CMPAK-4
Mounting SMD (SMT)
Temperature Range - Operating 175°C (TJ)
Maximum Current Collector 120mA
Typical Gain (hFE) (Min) 100 @ 40mA, 8V
Maximum Power Dissipation 500mW
Noise Figure (dB Typ @ f) 1.3dB to 2.4dB @ 900MHz
Frequency - Transition 9GHz
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Transistor Polarity NPN
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer NXP
Categories Discrete Semiconductor Products

Description

Product Overview: NXP BFG540W/X,115

The NXP BFG540W/X,115 is a high-performance, silicon NPN bipolar transistor that comes in a compact SOT343 package. This product is meticulously designed to meet the rigorous demands of RF front-end applications. With its exceptional features, the BFG540W/X,115 is an ideal choice for a wide range of applications, including but not limited to wireless communication systems, satellite TV receivers, GPS devices, and various other RF circuits.

Key Features

  • High Transition Frequency (fT): With an impressive transition frequency of 25 GHz, the BFG540W/X,115 ensures high-speed operation, making it suitable for high-frequency signal amplification.
  • Low Noise Figure: The low noise figure of this transistor makes it highly effective for applications where signal clarity is paramount, reducing the overall system noise and improving performance.
  • Excellent Gain Performance: It offers a high maximum power gain, which is essential for amplifying weak signals without significant loss of quality.
  • Robust Maximum Ratings: The device can handle a maximum collector current of 25 mA and a maximum collector-base voltage of 15 V, providing a good safety margin for various circuit designs.
  • Efficient Power Management: With a maximum total power dissipation of 250 mW, the BFG540W/X,115 is designed for efficient power usage, which is crucial in battery-powered or energy-sensitive applications.

Applications

The versatility of the BFG540W/X,115 makes it suitable for a diverse set of applications. It is commonly used in RF amplifiers, oscillators, and mixers. Its high-frequency performance also makes it a perfect fit for VHF and UHF applications, including FM radio, digital TV, and broadband communications. Designers and engineers favor this transistor for its reliability and excellent performance in signal processing tasks where maintaining signal integrity is crucial.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BFG540W/X,115 is no exception. Manufactured with precision, this product is designed to meet the highest industry standards, ensuring stable performance and longevity in a wide range of environmental conditions. Whether for commercial or industrial use, the BFG540W/X,115 is a testament to NXP's dedication to delivering superior RF components.

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