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BFG540W/XR,135

Part No BFG540W/XR,135
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS RF NPN 9GHZ 15V SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.3dB to 2.4dB @ 900MHz
Maximum Power Dissipation 500mW
Typical Gain (hFE) (Min) 100 @ 40mA, 8V
Maximum Current Collector 120mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package CMPAK-4
Win Source Part Number 097600-BFG540W/XR,135
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFG540W/XR,135 CAD Model

Description

The BFG540W/XR,135 is a high-performance NPN Silicon Germanium RF transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is specifically crafted to meet the rigorous demands of contemporary wireless communication systems. The BFG540W/XR,135 is an ideal choice for a wide range of applications, including but not limited to high-frequency amplification and oscillation in mobile communication devices, GPS systems, and various RF circuits.

Key Features

  • High Gain Bandwidth Product: The BFG540W/XR,135 boasts an impressive gain bandwidth product, ensuring high-speed signal amplification and processing capabilities, which is crucial for modern RF applications.
  • Low Noise Figure: With its low noise figure, this transistor provides clear signal amplification, minimizing the distortion and ensuring signal integrity, which is essential for high-quality wireless communication.
  • High Transition Frequency: The device features a high transition frequency (fT), making it suitable for applications requiring fast switching and operation at high frequencies.
  • Enhanced Reliability: NXP's commitment to quality means that the BFG540W/XR,135 is built to last and perform consistently under various conditions, offering enhanced reliability for critical applications.
  • Surface-Mount Package: The transistor comes in a small SOT343 (SC-70) surface-mount package, which allows for compact circuit design and is compatible with modern PCB assembly processes.

Applications

The BFG540W/XR,135 is versatile and can be used in various applications, including:

  • Low-noise RF amplifiers in mobile communication devices
  • Oscillators in GPS receivers
  • General-purpose RF circuits
  • Wireless LAN and Bluetooth systems
  • Other high-frequency signal processing tasks

Technical Specifications

Parameter Value Configuration Single Collector-Emitter Voltage (Vceo) 8V Collector Current (Ic) 25mA Power Dissipation (Pd) 250mW DC Current Gain (hFE) Typical 70 at 5mA, 5V Transition Frequency (fT) 25GHz Noise Figure (NF) 1.1dB

For detailed information and datasheets on the BFG540W/XR,135, please visit the NXP Semiconductors official website or contact their customer support for technical guidance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,100 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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