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BFM520,115

Part No BFM520,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN DUAL 70MA 8V 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 8V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.2dB to 2.1dB @ 900MHz
Maximum Power Dissipation 1W
Typical Gain (hFE) (Min) 60 @ 20mA, 6V
Maximum Current Collector 70mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 125347-BFM520,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFM520,115 CAD Model

Description

The BFM520,115 is a state-of-the-art RF transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is specifically crafted to meet the demanding requirements of today's RF power applications. It is ideally suited for use in a range of applications, including but not limited to broadcast transmitters, cellular base stations, and RF energy solutions.

Key Features

  • High Efficiency: The BFM520,115 is engineered for maximum efficiency, which is critical for RF applications where power conservation and heat management are paramount.
  • Wide Frequency Range: This RF transistor is capable of operating over a broad frequency spectrum, making it versatile for various communication systems.
  • Robustness: NXP's product is known for its durability and robustness, ensuring long-term reliability even in the most challenging environments.
  • Thermal Performance: The device boasts excellent thermal characteristics, which contribute to its overall performance stability and lifespan.

Applications

The versatility of the BFM520,115 allows it to be integrated into a multitude of RF applications. Its high power capability and efficiency make it particularly well-suited for:

  • Professional broadcast equipment
  • Telecommunications infrastructure such as GSM, CDMA, and LTE base stations
  • Industrial, scientific, and medical (ISM) applications
  • RF energy systems for heating and plasma generation

Technical Specifications

At the core of the BFM520,115's technical prowess are its specifications that cater to demanding RF power requirements:

  • Product Category: RF Transistor
  • Manufacturer: NXP Semiconductors
  • Mounting Style: SMD/SMT
  • Package / Case: Over-molded Plastic
  • Power Gain: High gain for effective signal amplification
  • Operating Temperature Range: Designed to function in a wide range of temperatures

Quality and Support

NXP Semiconductors is committed to delivering high-quality products. The BFM520,115 is backed by NXP's rigorous testing and quality assurance processes, ensuring that customers receive a reliable and superior product. Additionally, NXP provides comprehensive technical support to assist with integration and troubleshooting, making the BFM520,115 a secure choice for engineers and developers looking to enhance their RF power capabilities.

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