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BFU790F,115

Part No BFU790F,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN SOT343F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 2.8V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 0.4dB to 0.5dB @ 1.5GHz to 2.4GHz
Maximum Power Dissipation 234mW
Typical Gain (hFE) (Min) 235 @ 10mA, 2V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-DFP
Win Source Part Number 1023273-BFU790F,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BFU790F,115 CAD Model

Description

The BFU790F,115 is a high-performance NPN wideband silicon germanium radio frequency (RF) transistor designed by NXP Semiconductors. This advanced device is particularly suitable for applications in high-frequency circuits such as mobile communications, satellite TV tuners, GPS devices, and wireless LANs. With its cutting-edge SiGe:C technology, it offers a perfect blend of speed and functionality, making it a top choice for RF designers looking for efficiency and reliability.

Key Features

  • Frequency Range: The BFU790F,115 is capable of operating at high frequencies, making it ideal for RF applications that require wideband performance.
  • High Gain: It provides high gain at high frequencies, ensuring signal strength is maintained across various applications.
  • Low Noise Figure: The device boasts a low noise figure, which is crucial for maintaining signal integrity in communication systems.
  • High Linearity: This transistor offers high linearity, which is essential for the accurate transmission and reception of signals.

Applications

The BFU790F,115 is versatile and can be used in a wide range of applications, including:

  • Wireless communication systems
  • Satellite TV tuners
  • Global Positioning Systems (GPS)
  • Wireless LAN (WLAN) devices
  • General purpose RF applications

Specifications

Parameter Value Package SOT343F Configuration Single Collector-Emitter Voltage (VCEO) 12 V Collector Current (IC) 25 mA Transition Frequency (fT) 25 GHz Power Dissipation (Pd) 330 mW Operating Temperature Range -65°C to +150°C

For designers and engineers looking for a reliable and high-performance RF transistor, the BFU790F,115 from NXP offers an impressive solution that combines state-of-the-art technology with practical functionality. It is a testament to NXP's commitment to providing innovative semiconductor solutions for the most demanding RF applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
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* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,510 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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