The Infineon Technologies IPD65R600E6 is an N-Channel MOSFET transistor that is designed to operate in a temperature range of -55°C to 150°C.

• Temperature Range: -55°C to 150°C
• Power Dissipation: 63W (Tc)
• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current: 7.3A (Tc) @ 25°C
• Maximum Rds On: 600 mOhm @ 2.1A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3.5V @ 210μA
• Max Gate Charge: 23nC @ 10V
• Max Input Capacitance: 440pF @ 100V
• Package: PG-TO252-3
• Mounting: SMD (SMT)
• Category: Discrete Semiconductor Product
• New Designs: Not for new designs