The BLF177 is a high-performance RF power transistor from NXP Semiconductors, designed to accommodate a wide range of high-frequency applications. This transistor is particularly well-suited for broadcast transmitter applications, offering excellent reliability and efficiency. With its capability to operate at a frequency range of up to 108 MHz, the BLF177 is an ideal choice for VHF applications, including FM radio broadcast transmitters.

Key Features

• High Power: The BLF177 is capable of delivering a high output power of up to 150 Watts, making it suitable for applications that require a significant power boost.
• High Gain: It provides a high power gain of 22 dB, ensuring substantial signal amplification for effective broadcasting.
• Wide Frequency Range: Its operational frequency range of up to 108 MHz covers the entire FM band, allowing for versatile use in various VHF applications.
• High Efficiency: With an efficiency of up to 60%, the BLF177 ensures that power consumption is minimized, reducing operating costs and heat generation.
• Durability: Constructed with NXP's proven silicon N-channel MOSFET technology, the BLF177 is built for longevity and consistent performance.

Applications

• FM broadcast transmitters
• Industrial, scientific, and medical (ISM) applications
• Professional RF power amplifiers

Technical Specifications

With its robust design and superior performance characteristics, the NXP BLF177 RF power transistor stands out as a top choice for designers and engineers looking to push the boundaries of VHF broadcasting and high-frequency power amplification.