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BLF4G20-110B,112

Part No BLF4G20-110B,112
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.99GHZ SOT502A / Trans RF MOSFET N-CH 65V 12A 3-Pin SOT-502A Bulk
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tray
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.93GHz ~ 1.99GHz
Gain 13.5dB
Voltage - Test 28V
Current Rating 12A
Current - Test 700mA
Power - Output 100W
Voltage Rating DC 65V
Package SOT-502A
Manufacturer Package LDMOST
Win Source Part Number 770102-BLF4G20-110B,112
Popularity Medium
Supply and Demand Status Limited
Family Name BLF4G20-110B
Introduction Date January 23, 2006
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BLF4G20-110B,112 CAD Model

Description

Product Overview: NXP BLF4G20-110B,112

The NXP BLF4G20-110B,112 is a high-performance RF power transistor designed to meet the needs of modern RF power amplification. This device is part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) range, which is renowned for its high efficiency, reliability, and thermal performance. The BLF4G20-110B,112 is specifically engineered for broadband applications, making it an ideal choice for a wide range of uses, including but not limited to broadcast transmitters, cellular base stations, and industrial, scientific, and medical applications.

The BLF4G20-110B,112 operates within the 1800 MHz to 2200 MHz frequency range, providing a versatile solution for various communication bands. With an impressive output power of 110W, it ensures strong signal transmission and amplification, which is crucial for maintaining clear communication over long distances or through challenging environments. Its high gain and efficiency minimize the need for additional components, thereby reducing system complexity and costs.

This LDMOS transistor is also characterized by its excellent ruggedness, capable of withstanding severe load mismatch conditions without any performance degradation. This feature is particularly important in environments where antennas can be subjected to unpredictable conditions, ensuring consistent operation and longevity of the device.

The thermal management of the BLF4G20-110B,112 is exceptional due to its flange ceramic package, which provides superior thermal conductivity and stability. This packaging not only enhances the transistor's reliability but also extends its operational lifespan by keeping the junction temperature within safe limits during high-power transmissions.

Integration into RF power amplifier designs is straightforward with the BLF4G20-110B,112, thanks to its ease of handling and the availability of application information from NXP. Designers can take advantage of the comprehensive support and documentation provided, ensuring a smooth design-in process and quick time-to-market for their products.

In summary, the NXP BLF4G20-110B,112 is a robust and efficient solution for a variety of high-power RF applications. Its combination of power, efficiency, and ruggedness makes it a highly reliable component for any RF power amplification system.

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