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BLF4G20LS-110B,112

Part No BLF4G20LS-110B,112
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.99GHZ SOT502B
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features RF Mosfet LDMOS 28 V 650 mA 1.93GHz ~ 1.99GHz 13.4dB 100W SOT502B
Manufacturer NXP
Package Tray
Part Status Obsolete
Package SOT-502B
Case / Package SOT502B
Family Name BLF4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 568-2405, 934058713112, BLF4G20LS-110B, BLF4G20LS-110B-ND
Quantity per package 60
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 864282-BLF4G20LS-110B,112
Ultra Librarian 3D Model Ultra Librarian BLF4G20LS-110B,112 CAD Model

Description

The BLF4G20LS-110B,112 is a high-performance RF power transistor designed and manufactured by NXP Semiconductors. This LDMOS transistor is specifically engineered for use in a wide range of RF power applications, making it a versatile component for designers in the field of high-frequency communication and broadcasting.

Key Features

  • Frequency Range: The BLF4G20LS-110B,112 operates efficiently within the 1800 MHz to 2200 MHz frequency range, making it suitable for various applications, including cellular base station amplifiers, particularly those used in GSM and LTE networks.
  • High Output Power: With a typical output power of 110 watts, this LDMOS transistor is capable of delivering significant power amplification, ensuring reliable signal transmission over long distances.
  • High Efficiency: The device boasts an excellent efficiency rate, which not only conserves energy but also reduces the thermal load on system components, enhancing overall reliability and extending product lifespan.
  • Integrated ESD Protection: It comes with built-in Electrostatic Discharge (ESD) protection, safeguarding the device against unexpected voltage spikes and enhancing its robustness in challenging environments.
  • Thermal Performance: The BLF4G20LS-110B,112 is designed with superior thermal characteristics, ensuring stable performance even under high temperature operating conditions.

Applications

The BLF4G20LS-110B,112 is ideal for a variety of RF power applications. Its primary use is in RF power amplifiers for cellular base stations, but it is also suitable for use in broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as in aerospace and defense systems where reliable and high-powered RF transmission is essential.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BLF4G20LS-110B,112 is no exception. It is manufactured to meet the highest industry standards, ensuring both performance and durability. Customers can trust this component to perform reliably in critical and demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $61.5790 $61.5790
2+ $50.5264 $101.0528
4+ $48.9474 $195.7896
5+ $47.3685 $236.8425
6+ $45.7895 $274.7370
8+ $41.0527 $328.4216
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Availability: 20 pieces
Order Increment : 1 pcs
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