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BSP33

Part No BSP33
Manufacturer NXP / Nexperia
Catalog FETs - Single
Description PNP medium power transistors / Trans GP BJT PNP 80V 1A 1300mW Automotive 4-Pin(3+Tab) SC-73
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer NXP
Win Source Part Number 237318-BSP33
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Communications & Networking, Power Management
Family Name BSP33
Introduction Date September 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BSP33 CAD Model

Description

Introducing the NXP BSP33 Low V_CE(SAT) Transistor

The NXP BSP33 is a high-performance, low V_CE(SAT) bipolar junction transistor designed to deliver efficiency and reliability for a wide range of applications. This innovative component is a part of NXP's portfolio of low saturation voltage transistors, which are engineered to minimize power loss and maximize efficiency, making them ideal for power management tasks within electronic circuits.

Key Features

  • Low Collector-Emitter Saturation Voltage: The BSP33 boasts an exceptionally low V_CE(SAT), which typically translates to reduced power dissipation and improved overall efficiency. This feature is especially beneficial in applications where power conservation is critical.
  • High Current Capability: With the ability to handle significant current levels, the BSP33 is suitable for high-performance switching applications, providing robust and reliable operation even under demanding conditions.
  • Surface-Mount Package: Encased in a compact SOT223 surface-mount package, the BSP33 is designed for space-saving PCB layouts, offering designers a transistor that is both powerful and space-efficient.
  • Wide Range of Applications: This versatile transistor is ideal for use in various applications, including load switches, DC-DC converters, and power management modules, among others.

Technical Specifications

The NXP BSP33 transistor features a collector current (I_C) of up to 1A, which ensures sufficient headroom for a variety of loads. It has a collector-emitter voltage (V_CEO) of 60V, providing a wide operating range for different circuit designs. Additionally, the device has a low collector-emitter saturation voltage of typically 115mV at 500mA, which is a testament to its efficiency.

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality, and the BSP33 is no exception. Manufactured with state-of-the-art processes and subjected to rigorous testing, this transistor is built to deliver consistent performance and long-term reliability. Whether it's for consumer electronics, automotive applications, or industrial systems, the BSP33 from NXP is a choice that engineers can trust.

For detailed technical data, application notes, and support resources, visit the NXP Semiconductors official website or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6128 $56.4480
80+ $1.3234 $105.8720
120+ $1.2820 $153.8400
165+ $1.2407 $204.7155
210+ $1.1993 $251.8530
280+ $1.0752 $301.0560
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Availability: 12,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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