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IRFS3006PBF

Part No IRFS3006PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 60V 195A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 195A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5mOhm at 170A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 300nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8970pF at 50V
Power Dissipation (Maximum) 375W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187995-IRFS3006PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3006PBF CAD Model

Description

The IRFS3006PBF is a N-Channel MOSFET transistor manufactured by Infineon Technologies. in the open market.

  • Package: Tube
  • Mounting Style: SMD
  • Technology: MOSFET
  • Transistor Polarity: N-Channel
  • Maximum Power Dissipation: 375W
  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 195A
  • Rds On (Maximum) @ Id, Vgs: 2.5mOhm @ 170A, 10V
  • Gate source voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate charge (Qg) (Maximum) @ Vgs: 300nC @ 10V
  • Vgs (Maximum): ±20V
  • Input capacitance (Ciss) (Maximum) @ Vds: 8970pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0080 $50.4000
125+ $0.8271 $103.3875
190+ $0.8013 $152.2470
260+ $0.7754 $201.6040
335+ $0.7496 $251.1160
450+ $0.6720 $302.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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