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BSR19

Part No BSR19
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description NPN high-voltage transistors
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer NXP
Win Source Part Number 1154883-BSR19
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR19 CAD Model

Description

The BSR19 is a high-performance NPN bipolar junction transistor (BJT) developed by NXP Semiconductors, a leader in the electronic components industry. This transistor is designed to cater to a wide range of applications, particularly excelling in amplification and switching tasks where reliability and efficiency are paramount.

Key Features

  • High Current Gain Bandwidth Product: The BSR19 boasts a high fT, making it suitable for applications requiring fast switching and high-frequency operations.
  • Low Saturation Voltage: This feature ensures lower power dissipation and improved efficiency, especially critical in battery-operated devices where power conservation is essential.
  • High Collector Current: With its ability to handle significant current, the BSR19 is an excellent choice for driving moderate loads.
  • Robust Thermal Performance: The transistor is designed to operate reliably over a broad temperature range, making it suitable for challenging environmental conditions.

Applications

The versatile nature of the BSR19 allows it to be used in various applications, including, but not limited to:

  • Audio amplifiers and pre-amps
  • Signal processing
  • Switching circuits
  • Driver stages in hi-fi amplifiers and television circuits
  • Linear amplification and switching applications

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality, and the BSR19 is no exception. It is manufactured using state-of-the-art processes, ensuring high reliability and performance consistency. The BSR19 is also RoHS compliant, reflecting NXP's dedication to environmental sustainability.

Technical Specifications

Parameter Value
Collector-Emitter Voltage (Vceo) 20V
Collector Current (Ic) 500mA
Power Dissipation (Pd) 830mW
DC Current Gain (hFE) 40 to 500
Transition Frequency (fT) 200MHz

For detailed information and datasheets, customers are encouraged to visit NXP's official website or contact their sales representatives. The BSR19 is a testament to NXP's legacy of delivering high-quality, innovative semiconductor solutions to the electronics industry.

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