Product Overview: BUK7219-55A MOSFET by NXP Semiconductors

The BUK7219-55A is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed by NXP Semiconductors, a leader in providing innovative semiconductor solutions. This power MOSFET is particularly suitable for use in automotive applications and various other high-efficiency power management systems.

Key Features:

• Low On-State Resistance: The BUK7219-55A offers a very low on-state resistance (R_DS(on)) of 55 mΩ at V_GS = 10 V, which enhances its efficiency in conducting current and reduces power losses, making it an ideal choice for power-intensive applications.
• High Current Capability: With a continuous drain current (I_D) of 75 A, this MOSFET can handle high current loads, ensuring reliable performance in demanding situations.
• Robust Thermal Performance: The device is encapsulated in a TO-220AB package, known for its excellent thermal conduction properties, allowing for better heat dissipation and improved thermal management.
• Automotive Grade: Designed to meet the rigorous standards of the automotive industry, the BUK7219-55A is AEC-Q101 qualified, ensuring high reliability and performance under harsh conditions.
• Standard Level Gate Drive: Its standard level gate drive makes it compatible with a wide range of drive circuits, providing flexibility in design for various applications.

Applications:

The BUK7219-55A is suitable for a variety of applications, including but not limited to:

• Automotive systems such as engine control units, power steering, and DC/DC converters
• Switching regulators and power supply circuits
• Motor drives and controllers
• Protection and load switch applications

With its robust design, high efficiency, and automotive-grade qualification, the BUK7219-55A MOSFET from NXP Semiconductors is an excellent choice for designers looking to enhance the performance and reliability of their power management systems.