The BUK7560-100A is a high-performance PowerMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This robust component is engineered to deliver exceptional efficiency and power density, making it an ideal choice for a wide range of power conversion and management applications.
Key Features
- Low On-State Resistance (RDS(on)): The BUK7560-100A boasts an extremely low on-state resistance, which minimizes conduction losses and enhances overall efficiency in high-current applications.
- High Current Capability: With an ability to handle high currents, this PowerMOS transistor is suitable for demanding environments where substantial power handling is required.
- Fast Switching Speed: The device features fast switching characteristics, which reduce switching losses and improve performance in high-frequency power switching applications.
- Robust Thermal Performance: The BUK7560-100A is designed with excellent thermal management properties, ensuring reliable operation even at elevated temperatures.
- TrenchMOS™ Technology: Utilizing NXP's proprietary TrenchMOS technology, the BUK7560-100A achieves superior performance by combining low gate charge and low on-state resistance.
Applications
The versatility of the BUK7560-100A allows it to be used in a variety of applications, including:
- DC/DC converters
- Motor drives
- Power management systems
- Automotive applications
- Switch Mode Power Supplies (SMPS)
Product Specifications
| Parameter |
Value |
| Drain-source voltage (VDS) |
100V |
| Continuous drain current (ID) |
75A |
| Power Dissipation (PD) |
110W |
| Operating Temperature Range |
-55°C to +175°C |
The BUK7560-100A is a testament to NXP's commitment to providing high-quality, reliable semiconductor products that meet the evolving needs of the electronics industry. With its superior electrical characteristics and thermal performance, this PowerMOS transistor stands out as a top-tier component for power-intensive applications.