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BUK7611-55A,118

Part No BUK7611-55A,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 3093pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 166W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 125974-BUK7611-55A,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7611-55A,118 CAD Model

Description

Product Overview: BUK7611-55A,118 - NXP Semiconductors

The BUK7611-55A,118 is a high-performance PowerMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This product is engineered to deliver efficient power management and control in a variety of applications, making it an essential component for modern electronic systems.

Key Features

  • Low On-State Resistance: The BUK7611-55A,118 boasts an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency. This feature is particularly critical in high-current applications where power dissipation needs to be kept to a minimum.
  • High-Speed Switching: Designed for fast switching, this MOSFET can operate at high frequencies, which is beneficial for applications like switching power supplies and DC-DC converters where switching speed is crucial for performance.
  • Robust Thermal Performance: The device comes in a TO-220 package, which is known for its excellent thermal characteristics. The package ensures that the device can handle significant power levels without overheating, thus maintaining reliability and longevity.
  • Logic Level Compatible: This MOSFET can be driven directly from low-voltage control logic, which simplifies the design of drive circuits and reduces the overall system complexity.

Applications

The BUK7611-55A,118 is versatile and can be used in a wide range of applications, including:

  • Automotive systems
  • DC-to-AC inverters
  • Power supplies
  • Motor control circuits
  • LED lighting systems

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 55V Continuous Drain Current (I<sub>D) 75A Power Dissipation (P<sub>D) 110W Operating Temperature -55°C to +175°C

The BUK7611-55A,118 stands out for its durability, efficiency, and high performance, making it an ideal choice for designers looking to enhance their power management systems. NXP's commitment to quality ensures that this MOSFET meets the rigorous demands of the industry and provides a reliable solution for a multitude of electronic applications.

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