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BUK7Y25-80E/GF115

Part No BUK7Y25-80E/GF115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP
Series *
Package Bulk
Product Status Active
Standard Package 1,500 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1050075-BUK7Y25-80E/GF115
Ultra Librarian 3D Model Ultra Librarian BUK7Y25-80E/GF115 CAD Model

Description

The BUK7Y25-80E/GF115 is a state-of-the-art power MOSFET manufactured by NXP Semiconductors, a leader in the field of high-performance semiconductor components. This product is part of NXP's extensive portfolio of MOSFETs designed to deliver efficiency and reliability for a broad range of applications.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The BUK7Y25-80E/GF115 boasts an exceptionally low on-state resistance, which minimizes conduction losses and enhances overall efficiency, making it ideal for high-efficiency power management systems.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides rapid transition performance, which is crucial for reducing switching losses and improving power density.
  • Enhanced Thermal Performance: With an advanced package design, the BUK7Y25-80E/GF115 ensures superior thermal management, which contributes to its reliability and longevity even under strenuous operating conditions.
  • Robust TrenchMOS Technology: Utilizing NXP's TrenchMOS technology, this MOSFET offers a combination of high energy efficiency and ruggedness, making it suitable for demanding environments.

Applications

The BUK7Y25-80E/GF115 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Motor control circuits
  • Power management systems
  • Automotive applications
  • Switched Mode Power Supplies (SMPS)

Product Specifications

Parameter Value Drain-source voltage (V<sub>DS) 80V Continuous drain current (I<sub>D) 25A Power dissipation (P<sub>D) 45W Operating temperature range -55°C to +175°C

With its robust construction and advanced technology, the BUK7Y25-80E/GF115 from NXP is an excellent choice for designers seeking a reliable and efficient MOSFET for their power conversion and management solutions.

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