The BUK9507-30B,127 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is engineered to deliver efficiency and reliability for a wide range of applications, particularly in the automotive industry where high quality and durability are critical. Its standard level gate drive makes it suitable for various switching applications.

Key Features

• Low On-State Resistance (R<sub>ds(on)): The device boasts a very low on-state resistance, which translates to reduced conduction losses and enhances overall efficiency in applications.
• High-Speed Switching: The BUK9507-30B,127 is capable of high-speed switching, making it an excellent choice for applications requiring fast turn-on and turn-off times.
• Robust Thermal Performance: With an excellent thermal design, the MOSFET can operate reliably at higher temperatures, ensuring performance stability over a wide range of operating conditions.
• Standard Level Gate Drive: The device is compatible with standard level gate drives, allowing for flexibility in design and ease of integration into existing systems without the need for special drivers.

Applications

The BUK9507-30B,127 is versatile and can be used in a variety of applications, including:

• Automotive systems
• DC/DC converters
• Motor control circuits
• Power management systems
• Switching regulators

Product Specifications

• Product Category: MOSFET
• Configuration: Single
• Channel Mode: N-Channel
• Drain-Source Breakdown Voltage (V<sub>ds): 30V
• Continuous Drain Current (I<sub>d): 75A
• Power Dissipation (P<sub>d): 110W
• R<sub>ds(on): 7.5 mΩ
• Package/Case: TO-220AB

The BUK9507-30B,127 is an example of NXP's commitment to providing high-quality, robust components for demanding applications. Its combination of low on-state resistance, high-speed switching capabilities, and thermal efficiency make it a reliable choice for designers looking to optimize their power management solutions.