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BUK9E1R8-40E,127

Part No BUK9E1R8-40E,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK / N-Channel 40 V 120A (Tc) 349W (Tc) Through Hole I2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 16400 pF @ 25 V
Power Dissipation (Max) 349W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number BUK9E1R8
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346176-BUK9E1R8-40E,127
Ultra Librarian 3D Model Ultra Librarian BUK9E1R8-40E,127 CAD Model

Description

Introducing the BUK9E1R8-40E,127 Power MOSFET by NXP Semiconductors

The BUK9E1R8-40E,127 is a high-performance Power MOSFET brought to you by NXP Semiconductors, a leader in the electronic components industry. This product is designed to deliver efficient power management and conversion in a wide range of applications. With its state-of-the-art technology, the BUK9E1R8-40E,127 offers unparalleled performance for engineers and designers looking to optimize their power systems.

Key Features:

  • Low On-State Resistance (RDS(on)): The device boasts an extremely low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in high-current applications.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is capable of handling high-speed operations, making it suitable for high-frequency power converters and other demanding environments.
  • Enhanced Thermal Performance: The BUK9E1R8-40E,127 is designed with an advanced silicon technology that ensures superior thermal performance and reliability even under high temperature operating conditions.
  • Robust Package: Encased in a compact, surface-mount LFPAK56 (Power-SO8) package, the device offers a high power density footprint that is ideal for space-constrained applications.

Applications:

The versatility of the BUK9E1R8-40E,127 Power MOSFET allows it to be used in a multitude of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Battery-powered devices
  • Automotive applications

Product Specifications:

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 1.8A
  • Power Dissipation (PD): 43.3W
  • Operating Temperature: -55°C to +175°C

With its impressive array of features and specifications, the BUK9E1R8-40E,127 from NXP Semiconductors is a perfect choice for designers who need a reliable and efficient power switching solution. Whether you're working on automotive electronics, portable devices, or industrial power systems, this Power MOSFET will help you achieve a compact, efficient, and high-performance design.

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