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BUK9K5R1-30EX

Part No BUK9K5R1-30EX
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description BUK9K5R1-30E - DUAL N-CHANNEL 30  /  Mosfet Array 2 N-Channel (Dual) 30V 40A 68W Surface Mount LFPAK56D
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr NXP USA Inc.
Package Bulk
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A
Rds On (Max) @ Id, Vgs 5.3mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3065pF @ 25V
Power - Max 68W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-1205, 8-LFPAK56
Supplier Device Package LFPAK56D
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-BUK9K5R1-30EX,NEXNEXBUK9K5R1-30EX
Standard Package 1
Win Source Part Number 1208939-BUK9K5R1-30EX
Ultra Librarian 3D Model Ultra Librarian BUK9K5R1-30EX CAD Model

Description

The NXP BUK9K5R1-30EX is a high-performance, N-channel TrenchMOS™ power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This advanced technology has been engineered by NXP Semiconductors, a leader in the industry, to provide cutting-edge solutions for power management and conversion.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The BUK9K5R1-30EX features an exceptionally low on-state resistance, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current (I<sub>D): With a robust continuous drain current capacity, this MOSFET can handle high power applications with ease.
  • 30V Drain-Source Voltage (V<sub>DS): This device is designed to operate effectively at a drain-source voltage of 30V, making it suitable for a variety of mid-voltage applications.
  • Fast Switching Performance: The fast switching capabilities of the BUK9K5R1-30EX ensure minimal switching losses and are ideal for high-frequency power switching applications.
  • Enhanced Thermal Performance: Its superior thermal management characteristics ensure reliability even under high temperature operating conditions.
  • Single Pulse Avalanche Energy Rated (E<sub>as): This MOSFET can withstand high energy pulses in the avalanche and commutation modes, which is critical for rugged applications.

Applications

The NXP BUK9K5R1-30EX MOSFET is versatile and can be utilized in various applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The BUK9K5R1-30EX is built to meet stringent industry standards, ensuring both performance and durability for the most demanding conditions. With its robust design and advanced TrenchMOS™ technology, this MOSFET is a reliable choice for designers looking to optimize their power systems.

For detailed specifications and application support, the BUK9K5R1-30EX data sheet and technical documentation are available on the NXP Semiconductors website.

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